symbol v ds v gs i dm t j , t stg symbol typ max 31 40 63 75 r q jl 21 30 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage -12 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -9 -20 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c i d -11 12v p-channel mosfet v ds (v) = -12v i d = -11 a (v gs = -4.5v) r ds(on) < 16m w (v gs = -4.5v) r ds(on) < 20m w (v gs = -2.5v) r ds(on) < 25m w (v gs = -1.8v) esd rating: 4kv hbm 100% uis tested 100% rg tested the AO4437 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable fo r use as a load switch or in pwm applications. it is esd prot ected. soic-8 s g d www.freescale.net.cn 1/4 AO4437 general description features
symbol min typ max units bv dss -12 v -1 t j =55c -5 1 m a 10 m a v gs(th) -0.3 -0.55 -1 i d(on) -20 a 12.4 16 t j =125c 17 21 15.9 20 m w 20.4 25 m w g fs 38 s v sd -0.74 -1 v i s -4.5 a c iss 3960 4750 pf c oss 910 pf c rss 757 pf r g 6.9 8.5 w q g 37 47 nc q gs 4.5 nc q gd 11 nc t d(on) 15 ns t r 43 ns t d(off) 158 ns t f 95 ns t rr 64 ns q rr 50 nc gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delay time dynamic parameters i f =-11a, di/dt=100a/ m s v gs =0v, v ds =-6v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-6v, i d =-11a gate source charge gate drain charge turn-on rise time turn-off delay time v gs =-4.5v, v ds =-6v, r l =0.55 w , r gen =3 w m w v gs =-2.5v, i d =-10a i s =-1a,v gs =0v v ds =-5v, i d =-11a i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-9.6v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current v ds =0v, v gs =4.5v i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-11a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-1.8v, i d =-6a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-11a reverse transfer capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev3: nov. 2010 www.freescale.net.cn 2/4 12v p-channel mosfet AO4437
typical electrical and thermal characteristics 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 1.4 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =-6a, v gs =-1.8v i d =-10a, v gs =-2.5v i d =-11a, v gs =-4.5v 0 5 10 15 20 25 30 35 40 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d =-11a 25c 125c 25c 125c v ds =-5v v gs =-1.8v v gs =-2.5v v gs =-4.5v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.0v -1.5v -2.0v -8.0v www.freescale.net.cn 3/4 12v p-channel mosfet AO4437
typical electrical and thermal characteristics 0.00e+00 1.00e+00 2.00e+00 3.00e+00 4.00e+00 5.00e+00 0 5 10 15 20 25 30 35 40 45 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 800 1600 2400 3200 4000 4800 5600 6400 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s v ds =-6v i d =-11a t j(max) =150c t a =25c www.freescale.net.cn 4/4 12v p-channel mosfet AO4437
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